P-Channel Enhancement Mode MOSFET
Все аналоги
Полный отчётТехнические параметры
| Условия эксплуатации и корпус | |
|---|---|
| AEC Qualified | Yes |
| Другое | |
| C ISS Condition @|V DS | (V) | 10 V |
| C ISS Typ (pF) | 178.5 pF |
| Compliance (Only Automotive Supports PPAP) | Standard |
| ESD Diodes (Y|N) | Yes |
| |I DS | @T A = +25°C (A) | 0.9 A |
| P D @T A = +25°C (W) | 0.5 W |
| Polarity | P |
| R DS(ON) Max@ V GS (2.5V) (mΩ) | 500 mΩ |
| R DS(ON) Max@ V GS (4.5V) (mΩ) | 300 mΩ |
| |V DS | (V) | 20 V |
| |V GS(TH) | Max (V) | 1.2 V |
| |V GS(TH) | Min (V) | 0.5 V |
| |V GS | (±V) | 12 ±V |