onsemiСША
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
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Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.9A, 8.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 900mW |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Другое | |
| Base Product Number | FDS69 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.9A, 10V |
| Series | PowerTrench®, SyncFET™ |
| Vgs(th) (Max) @ Id | 3V @ 250µA |