Rohm SemiconductorЯпония
60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Drain Current I D [A] | 10 |
| Drain-Source Voltage V DSS [V] | 60 |
| Drive Voltage[V] | 4.5 |
| Power Dissipation (PD)[W] | 13 |
| Условия эксплуатации и корпус | |
| Mounting Style | Surface mount |
| Package Code | HSMT8 |
| Package Size [mm] | 3.3x3.3 (t=0.9) |
| Storage Temperature (Max)[℃] | 150 |
| Storage Temperature (Min)[℃] | -55 |
| Другое | |
| Number of terminal | 8 |
| Polarity | Nch+Nch |
| R DS(on) [Ω] V GS =10V(Typ) | 0.069 |
| R DS(on) [Ω] V GS =4.5V(Typ) | 0.099 |
| R DS(on) [Ω] V GS =Drive (Typ) | 0.099 |
| Total gate charge Q g [nC] | 1.7 |