P-CHANNEL POWER MOSFET
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Другое | |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Mfr | International Rectifier |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |