<p> This 700V mSiC module in a phase‑leg configuration provides a highly efficient power switching building block for high‑voltage inverter and power conversion stages. Built with silicon carbide MOSFET technology, the phase‑leg topology enables fast switching, low conduction and switching losses and improved thermal performance while supporting high DC bus voltages. This configuration supports compact, high‑power‑density system designs with clean switching behavior and scalable performance for advanced SiC power architectures.</p><p> The 62mm D3 mSiC module package is optimized for high‑performance silicon carbide power applications, offering a low‑inductance layout and excellent thermal capability to support fast, efficient switching. Its electrically and mechanically optimized design enables reliable high‑voltage operation and high power density, making the D3 package well suited for advanced inverter and power conversion systems in industrial, renewable energy, and e‑mobility applications.</p>
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current A (ampere) | 538 |
| Характеристики по постоянному и переменному току | |
| Fall Time tF ns (nanosecond) | 92 |
| Rise Time tR ns (nanosecond) | 125 |
| Условия эксплуатации и корпус | |
| MaxOperatingJunctionTemp | 175 |
| Другое | |
| Configuration | Phase Leg |
| PKG | D3 |
| RDSon (mΩ) typ | 2.5 |
| Silicon Type | SiC MOSFET |
| Total Gate Charge (nC) | 1290 |
| VDSS (V) | 700 |