WeEn SemiconductorsНидерланды
650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter. 650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Voltage class(V) | 650 |
| Условия эксплуатации и корпус | |
| Package | TO247 |
| Другое | |
| Build-in Diode | Yes |
| Ic @100℃(A) | 30 |
| PD @25℃(W) | 312 |
| Technology | Trench Field-stop |
| VCE(sat)@25℃ Typ.(V) | 1.45 |
| VGEth(V) | 4.5 |
| VGE(V) | ±20 |