Results forRJK0393DPA
12 partsProduct search results12 total
- RJK0393DPA-00#J53
Single FETs, MOSFETs
MOSFET N-CH 30V 40A 8WPAK
- RJK0393DPA-00#J53
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 40A 8WPAK
- RJK0393DPA-00#J5A
Single FETs, MOSFETs
MOSFET N-CH 30V 40A 8WPAK
- RJK0393DPA-00#J5A
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 40A 8WPAK
- RJK0393DPA-00-J53
SCRs - Modules
Nch Power MOSFET 30V 40A 4.3mohm Power SON-8 5x6
- RJK0393DPA-00-J5A
SCRs - Modules
Nch Power MOSFET 30V 40A 4.3mohm Power SON-8 5x6
- RJK0393DPA-0G#J7A
Single FETs, MOSFETs
POWER TRANSISTOR, MOSFET
- RJK0393DPA-0G#J7A
Transistors - FETs, MOSFETs - Single
POWER TRANSISTOR, MOSFET
- RJK0393DPA-WS#J5A
Transistors - FETs, MOSFETs - Single
IGBT
- RJK0393DPA-00#J53-HXY
Transistors - FETs, MOSFETs - Single
该N沟道MOSFET具备90A的连续漏极电流能力，最大漏源电压为30V，导通电阻为3.5毫欧，栅源驱动电压最高可达20V。其低导通电阻有助于在大电流应用中有效降低功率损耗，提升系统效率。器件适用于高频率开关电源、直流-直流转换器以及对热性能和空间布局有较高要求的电子设备中，能够在保持稳定工作的同时减少散热设计复杂度。
- RJK0393DPA-00#J5A-HXY
Transistors - FETs, MOSFETs - Single
该N沟道MOSFET具备90A的连续漏极电流能力，最大漏源电压为30V，导通电阻低至3.5毫欧，栅源电压额定值为20V。其极低的导通电阻有助于显著降低导通损耗，提升系统效率，适用于高电流、高频率的电源管理、电机控制及同步整流等电路中。器件在大电流工作条件下仍能保持良好的热稳定性和开关性能，适合对功率密度和能效有较高要求的应用场合。
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